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SiS902DN
Vishay Siliconix
Dual N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.186 at V GS = 10 V
0.228 at V GS = 4.5 V
I D (A)
4 e
4 e
Q g (Typ.)
2.1 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1.07 mm
Profile
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
? POL
D 1
D 2
3.30 mm
1
S1
G1
3.30 mm
2
3
S2
G2
8
D1
D1
4
G 1
G 2
7
6
D2
5
D2
Bottom View
S 1
S 2
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
4 e
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Avalanche Current
Single-Pulse Avalanche Energy
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I AS
E AS
4 e
3 a, b
2.4 a, b
8
2
0.2
A
mJ
T C = 25 °C
15.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
9.9
3.1 a, b
W
T A = 70 °C
2 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
1
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